 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SUD40N03-18P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.018 @ VGS = 10 V 0.027 @ VGS = 4.5 V ID (A)a "40 "34 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD40N03-18P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 "40 "28 "100 40 62.5c 7.5b -55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Junction-to-Lead Notes a. Package Limited. b. Surface Mounted on 1" x1" FR4 Board, t v 10 sec. c. See SOA curve for voltage derating. Document Number: 71086 S-63636--Rev. A, 08-Nov-99 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Symbol RthJA RthJC RthJL Typical 17 50 2 4 Maximum 20 60 2.4 4.8 Unit _C/W _C/W 2-1 SUD40N03-18P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb DiS OS Ri rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 10 A Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 10 0.021 40 0.014 0.018 0.029 0.027 S W 30 V 1.0 "100 1 50 nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0 37 W V, 0.37 ID ^ 40 A, VGEN = 10 V RG = 2 5 W A V, 2.5 V, VDS = 15 V, VGS = 10 V ID = 40 A V VGS = 0 V, VDS = 25 V F = 1 MH V V, MHz 1300 340 95 19 5 3 8 8.5 17 6 12 13 ns 25 9 30 nC C pF F Source-Drain Diode Ratings and Characteristic (TC = 25_C) Continuous Current Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time IS ISM VSD trr IF = 100 A, VGS = 0 V IF = 40 A, di/dt = 100 A/ms 30 40 A 80 1.5 50 V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71086 S-63636--Rev. A, 08-Nov-99 SUD40N03-18P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 160 VGS = 10 thru 8 V 120 I D - Drain Current (A) I D - Drain Current (A) 6V 6V 120 25_C 125_C 80 160 TC = -55_C Vishay Siliconix Transfer Characteristics 80 5V 40 4V 40 2, 3 V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 60 TC = -55_C 50 g fs - Transconductance (S) 25_C 125_C r DS(on)- On-Resistance ( W ) 0.05 0.06 On-Resistance vs. Drain Current 40 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 30 20 10 0.01 0 0 20 40 60 80 100 120 0 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 1800 20 Gate Charge V GS - Gate-to-Source Voltage (V) 1500 Ciss C - Capacitance (pF) 1200 16 VDS = 15 V ID = 40 A 12 900 8 600 Coss Crss 300 4 0 0 5 10 15 20 25 30 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71086 S-63636--Rev. A, 08-Nov-99 www.vishay.com S FaxBack 408-970-5600 2-3 SUD40N03-18P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 40 A r DS(on)- On-Resistance ( W ) (Normalized) 1.6 I S - Source Current (A) TJ = 175_C 100 Source-Drain Diode Forward Voltage 1.2 TJ = 25_C 10 0.8 0.4 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 50 500 10, 100 ms Limited by rDS(on) Safe Operating Area 40 I D - Drain Current (A) I D - Drain Current (A) 100 30 10 1 ms 10 ms 100 ms 1s dc 20 1 TC = 25_C Single Pulse 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 71086 S-63636--Rev. A, 08-Nov-99 1 10 30 2-4 |
Price & Availability of SUD40N03-18P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |